vs-hfa15tb60spbf, vs-HFA15TB60-1PBF www.vishay.com vishay semiconductors revision: 10-jun-11 1 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? , ultrafast soft recovery diode, 15 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? halogen-free according to iec61249-2-21 definition ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level ? aec-q101 qualified benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa15tb60spbf, vs-HFA15TB60-1PBF is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performanc e which is unsurpassed by any rectifier previously available. with basic ratings of 600 v and 15 a continuous current, the vs-hfa15tb60spbf, vs-HFA15TB60-1PBF is especially well suited for use as the companion diode for igbts an d mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both th e diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the he xfred vs-hfa15tb60spbf, vs-HFA15TB60-1PBF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and ma ny other similar applications where high speed, high efficiency is needed. product summary package to-263ab (d 2 pak), to-262aa i f(av) 15 a v r 600 v v f at i f 1.7 v t rr (typ.) 23 ns t j max. 150 c diode variation single die d 2 pak ba s e cathode anode 1 3 2 n/c to-262 n/c anode 1 3 2 v s -hfa15 tb60 s pbf v s -hfa15 tb60-1pbf absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current i f t c = 100 c 15 a single pulse forward current i fsm 150 maximum repetitive forward current i frm 60 maximum power dissipation p d t c = 25 c 74 w t c = 100 c 29 operating junction and storage temperature range t j , t stg - 55 to + 150 c
vs-hfa15tb60spbf, vs-HFA15TB60-1PBF www.vishay.com vishay semiconductors revision: 10-jun-11 2 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condit ions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 15 a see fig. 1 -1.31.7 i f = 30 a - 1.5 2.0 i f = 15 a, t j = 125 c - 1.2 1.6 maximum reverse leakage current i rm v r = v r rated t j = 125 c, v r = 0.8 x v r rated see fig. 2 -1.010 a - 400 1000 junction capacitance c t v r = 200 v see fig. 3 - 25 50 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time see fig. 5 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 23 - ns t rr1 t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 200 v -5060 t rr2 t j = 125 c - 105 120 peak recovery current see fig. 6 i rrm1 t j = 25 c - 4.5 6.0 a i rrm2 t j = 125 c - 6.5 10 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 84 180 nc q rr2 t j = 125 c - 241 600 peak rate of fa ll of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 188 - a/s di (rec)m /dt2 t j = 125 c - 160 - thermal - mechanical specifications parameter symbol test conditi ons min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc --1.7 k/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.5 - weight -2.0- g -0.07- oz. marking device case style d 2 pak hfa15tb60s case style to-262 hfa15tb60-1
vs-hfa15tb60spbf, vs-HFA15TB60-1PBF www.vishay.com vishay semiconductors revision: 10-jun-11 3 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 150 c t j = 125 c t j = 25 c 1.0 2.4 1.2 1.4 v fm - forwar d voltage drop (v) i f - instantaneous forwar d current (a) 100 1.8 2.2 2.0 1.6 94054_01 0.01 94054_02 0.1 1 10 100 0 v r - reverse voltage (v) i r - reverse current (a) t j = 125 c t j = 25 c 1000 100 600 500 300 10 000 t j = 150 c 400 200 10 100 10 100 1000 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 94054_03 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response s ingle pul s e (thermal re s pon s e) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 94054_04
vs-hfa15tb60spbf, vs-HFA15TB60-1PBF www.vishay.com vishay semiconductors revision: 10-jun-11 4 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt 80 40 0 100 1000 d i f / d t (a/s) t rr (ns) v r = 200 v t j = 125 c t j = 25 c 60 20 i f = 30 a i f = 15 a i f = 5 a 100 94054_05 20 15 0 100 1000 d i f / d t (a/s) i rr (a) v r = 200 v t j = 125 c t j = 25 c 5 10 25 i f = 30 a i f = 15 a i f = 5 a 94054_06 800 0 100 1000 d i f / d t (a/s) q rr (nc) 600 200 400 100 300 500 700 i f = 30 a i f = 15 a i f = 5 a v r = 200 v t j = 125 c t j = 25 c 94054_07 10 000 1000 100 1000 d i f / d t (a/s) d i (rec)m / d t (a/s) v r = 200 v t j = 125 c t j = 25 c 100 i f = 30 a i f = 15 a i f = 5 a 94054_08
vs-hfa15tb60spbf, vs-HFA15TB60-1PBF www.vishay.com vishay semiconductors revision: 10-jun-11 5 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-hfa15tb60spbf, vs-HFA15TB60-1PBF www.vishay.com vishay semiconductors revision: 10-jun-11 6 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions to-263ab (d 2 pak): www.vishay.com/doc?95046 to-262aa : www.vishay.com/doc?95419 part marking information to-263ab (d 2 pak): www.vishay.com/doc?95054 to-262aa : www.vishay.com/doc?95420 packaging information www.vishay.com/doc?95032 spice model www.vishay.com/doc?95357 2 - hexfred ? family 1 - vishay semiconductors product 3 - electron irradiated 4 - current rating (15 = 15 a) 5 - package: tb = to-220 6 - voltage rating (60 = 600 v) 7 - s = d 2 pak - -1 = to-262 - pbf = lead (pb)-free - 9 8 - none = tube (50 pieces) trl = tape and reel (left oriented, for d 2 pak package ) trr = tape and reel (right oriented, for d 2 pak package ) device code 5 1 3 2 4 6 7 8 9 vs- hf a 15 tb 60 s trl pbf p = lead (pb)-free (for d 2 pak trl and trr )
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
document number: 95419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-262 outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") pe r side. these di mensions are measured at the outmost e xtremes of th e plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) controlling dime nsion: inches (6) outline conform to jedec to- 262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b1, b3 (b, b2) c1 c section b - b and c - c scale: none section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (datum a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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